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新型CoolMOS~(TM) 650V CFD技术为具有高性能体二极管的高压功率MOSFET确立了一个新基准。新型器件综合了多方优势,包括高达650V阻断电压、极低的R_(dson)、容性损耗低、同时还改善了体二极管在反向恢复过程,特别是软硬转换应用时的坚固度。随着性能的提高,将介绍列入参数表的Q_(rr)和t_(rr)的最大值。本文还研究了改善体二极管坚固度的相关因素。这种具有快恢复体二极管的新型超结器件系列的优点,在HID半桥拓扑中尤为突出。它也可用于DPAK封装。
The new CoolMOS ™ 650V CFD technology sets a new benchmark for high-voltage power MOSFETs with high-performance body diodes. The new devices combine multiple benefits, including up to 650V blocking voltage, very low R dson, low capacitive losses and improved body diode ruggedness in reverse recovery processes, especially in hard and soft switching applications. As performance increases, the maximum values of Q_ (rr) and t_ (rr) included in the parameter table will be introduced. This article also studies the factors that improve the body diode solidity. The advantages of this family of new superjunction devices with fast recovery body diodes are particularly prominent in HID half-bridge topologies. It is also available in DPAK package.