论文部分内容阅读
N型多米诺或门是高性能集成电路常用的动态单元,负偏置温度不稳定性(NBTI)引起的PMOS管老化问题已成为降低多米诺或门电路可靠性的主要因素之一。仿真分析表明,N型多米诺或门中各种PMOS管受NBTI的影响有明显差别。针对这种差异,提出一种双阈值配置的抗老化多米诺或门。对电路老化起关键作用的保持PMOS管和反相器PMOS管采用低阈值电压设计。仿真结果表明,在保证噪声容限和功耗的条件下,该双阈值配置PMOS管的多米诺或门在10年NBTI老化后仍有0.397%的时序余量。
N-type domino or gate is a dynamic unit commonly used in high performance integrated circuits. The aging of PMOS transistors caused by negative bias temperature instability (NBTI) has become one of the main factors in reducing the reliability of domino or gate circuits. Simulation analysis shows that the effect of NBTI on the N-type domino or gate PMOS transistors is obviously different. In view of this difference, we propose a double threshold configuration anti-aging domino or gate. The aging of the circuit plays a key role in maintaining the PMOS transistor and PMOS transistor PMOS low threshold voltage design. The simulation results show that the domino gate with the double threshold configuration PMOS transistor still has a 0.397% timing margin after 10 years NBTI aging under the condition of ensuring the noise margin and the power consumption.