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我们将SiGe合金在干氧吹气环境下以不同的温度和不同的时值进行氧化处理,用卢摄福散射仪RBS和高精度椭偏仪HP-ESM测量样品,获得10-80 nm厚的硅氧化层和1 nm厚的富锗层。新发现快速氧化生成的氧化膜表面有1-2 nm厚的锗层。分析了锗纳米结构对应的PL发光谱,注意到锗纳米层对应的541 nm波长的尖锐的发光峰和不同尺寸的锗原子团对应的从550-720 nm波长的发光带。从量子受限模型和局域密度泛函计算出发,合理地解释了实验的结果。
We oxidized SiGe alloys at different temperatures and different times under a dry oxygen blowing condition. Samples were measured with a Luflux RBS and a high-precision ellipsometer HP-ESM to obtain a 10-80 nm thick Silicon oxide and 1 nm thick germanium-rich layer. Newly discovered oxide film surface formed by rapid oxidation has a 1-2 nm thick germanium layer. The corresponding PL emission spectra of germanium nanostructures were analyzed. The sharp luminescence peaks at 541 nm corresponding to the germanium nanostructures and the luminescent bands from 550 nm to 720 nm corresponding to different germanium groups were observed. Based on the quantum confined model and the local density functional theory, the experimental results are explained reasonably.