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报道了用分子束外延(MBE)方法生长的掺杂InGaAs吸收层PIN InP/InGaAs/InP双异质结外延材料,通过干法刻蚀和湿法腐蚀相结合制作台面、硫化和聚酰亚胺钝化、电极生长等工艺,制备了128×1台面正照射InGaAs探测器阵列.测试了器件的变温I-V、响应光谱和探测率,在278K时平均峰值探测率为1.03×1012cmHz1/2W-1.实现了128元InGaAs探测器阵列与CTIA结构L128读出电路相互连,经封装后,在室温(291K)时成功测出128元响应信号.焦平面响应的不均匀性为18.3%,并对不均匀性产生的原因进行了分析.
The PIN InP / InGaAs / InP double heterostructure epitaxial material doped with InGaAs absorber grown by molecular beam epitaxy (MBE) is reported. The mesa, sulfide and polyimide are synthesized by dry etching and wet etching Passivation, electrode growth and other processes to prepare a 128 × 1 mesa InGaAs detector array is irradiated.The temperature of the device IV, response spectrum and detection rate were tested, the average peak detection rate at 278K 1.03 × 1012cmHz1 / 2W-1. The 128-element InGaAs detector array is connected to the CTIA L128 readout circuit and the 128-element response signal is successfully measured at room temperature (291K) after encapsulation.The inhomogeneity of the focal plane response is 18.3% The causes of uniformity were analyzed.