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应用灵敏的电子能谱分析技术,对经电离辐射辐照的Si-SiO_2结构进行深度剖析。实验结果表明:存在于Si-SiO_2中的界面区,在电离辐射的作用下向SiO_2表面方向展宽,界面中心向SiO_2表面方向移动。展宽与偏移的程度与辐照条件紧密相关。文中对实验结果以弱应力键断裂模型进行了分析。
The sensitive electronic energy spectrum analysis technique is used to analyze the structure of Si-SiO 2 irradiated by ionizing radiation. The experimental results show that the interface region existing in Si-SiO_2 propagates to the surface of SiO_2 under ionizing radiation, and the center of the interface moves toward the surface of SiO_2. The degree of broadening and offset is closely related to the irradiation conditions. In this paper, the experimental results are analyzed by the weak stress key fracture model.