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最近,在 N_2压力为20kbar 下,从液 Ga 溶液中生长了高质量的、透明、无色、5mm GaN 晶片。本文阐述了这些晶体的结构及电学和光学性质。在用MOCVD 外延生长同质 GaN 时,这些晶体被用来作为衬底。通过掺杂 Si 和 Mg获得 n 型和 p 型层。在低温(4.2K)下,已发现分别与束缚中性受主和两个中性施主激发相关的强而窄的3.4666eV(FWHM=1.0meV)和3.4719eV(FWHM=1.3meV)的 PL 线,已用于非掺杂 GaN 层。在同质外延生长 p-n 结中已检测出紫外近边带电致发光。
Recently, high quality, transparent, colorless, 5 mm GaN wafers were grown from a liquid Ga solution at a N 2 pressure of 20 kbar. This article describes the structure and electrical and optical properties of these crystals. These crystals are used as a substrate when growing homogenous GaN by MOCVD. N-type and p-type layers are obtained by doping Si and Mg. At low temperatures (4.2 K), the strong and narrow PL lines of 3.4666 eV (FWHM = 1.0 meV) and 3.4719 eV (FWHM = 1.3 meV) were found, respectively, associated with the bound neutral acceptor and the two neutral donor activators, respectively , Has been used for non-doped GaN layer. In the homoepitaxial growth p-n junction has been detected in the vicinity of ultraviolet light electroluminescence.