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开关现象在一些片状和薄膜半导体样品中早巳观察到.但是,迄今为止,尚未见到有关金刚石薄膜开关特性的报道.鉴于金刚石薄膜有着许多优异的电学特性,如有较宽的能带间隙、高的击穿电压、高的电子迁移率以及高的饱和电子速度,因而,金刚石薄膜开关特性的研究,无疑会对实现高压、大功率开关器件有重要应用价值.我们研究了无衬底多晶金刚石薄膜的电流(I)-电压(U)特性.发现,金刚石薄膜在液氮温度和常温下有明显的开关特性,而液氮温度下的开关特性还具有明显的双稳态特点.
Switching phenomenon has been observed in some sheet and thin film semiconductor samples, but so far, no reports have been made on the switching characteristics of diamond films.Because diamond films have many excellent electrical properties, such as wider band gap , High breakdown voltage, high electron mobility and high saturated electron velocity, therefore, the study of diamond thin film switching characteristics will undoubtedly have an important application value for realizing high-voltage and high-power switching devices.We studied the substrateless The current (I) -voltage (U) characteristics of the diamond films show that the diamond films have obvious switching characteristics at liquid nitrogen temperature and room temperature, while the switching characteristics at liquid nitrogen temperature have obvious bistability.