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在28-160K温度范围内测量了液相外延制备的n-PbTe/p-PbSnTe异质结构二极管的零偏压结电阻面积乘积R_oA.采用通常的p-n结模型计算了R_oA的温度关系,并与实验曲线进行比较,结果表明:对于掺杂浓度约10~(17)cm~(-3)、77K的半峰值截止波长为11.5μm的典型二极管,在低于50K时R_oA主要受隧道电流限制.
The product of the zero-bias junction resistance area product R_oA of n-PbTe / p-PbSnTe heterostructure diode prepared by liquid-phase epitaxy was measured in the temperature range of 28-160 K. The temperature relationship of R_oA was calculated by the usual pn junction model, The experimental results show that R_oA is mainly limited by the tunneling current below 50K for a typical diode with a half-peak cut-off wavelength of 11.5μm at a doping concentration of about 10-17 cm -3.