日本电信电话公司(NTT)在硅基片上进行砷化镓晶体生长制成薄膜太阳电池。它的光电转换效率和面积都超过了已实用化的以砷化镓作基片的太阳电池,并解决了用不同材料复合后出现的晶体缺陷(位错)和裂纹两大难题。研究出了引入两种变形层和有选择性地进行晶体生长的新技术。这种薄膜太阳电池兼有硅的价格低廉、质轻、强度高和砷化镓寿命长的优点。这一高效长寿命大面积化太阳电池新产品试制成果,准备推广应用到卫星电源上。 Nippon Telegraph and Telephone Corp. (NTT) makes GaAs crystal growth on thin silicon solar cells. Its photoelectric conversion efficiency and area exceed the practical use of gallium arsenide as a substrate for solar cells, and solve the complex materials with different crystal defects (dislocations) and cracks two major problems. New techniques have been developed that introduce two deformable layers and selectively grow crystals. This thin-film solar cell combines the advantages of low cost, light weight, high strength and long lifetime of gallium. This high-efficiency long-life large-scale solar cell product trial results, ready to promote the application of satellite power.