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本文从研究不同单元尺寸浮栅隧道氧化层EEPROM在不同状态、不同温度保存下阈值电压的变化入手 ,论述了浮栅隧道氧化层EEPROM中浮栅上电荷的泄漏机理 ,并提出了改进EEPROM保持特性的措施 .
In this paper, we study the threshold voltage variation of floating-gate tunnel oxide (EEPROM) with different cell sizes under different states and temperatures, and discuss the leakage mechanism of the floating gate oxide in the floating-gate tunnel oxide layer EEPROM. The measure.