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一种称为模拟退火(SA)的计算优化法已用于设计单片分布放大器,用这种计算机辅助设计(CAD)程序可以得到MESFET小信号等效电路模型的各元件值、栅与漏传输线的特征值和放大器的级数,并与给定频响相匹配。该程序的成功之处在于全自功,仅需要输入放大器所需的平坦带增益和3dB功率点。本方法很通用,能用来解决各种不同的设计问题。此外,与Touchstone——目前最流行的微波模拟程序设计的分布放大器结果相比较,也十分吻合。
A computational optimization method called Simulated Annealing (SA) has been used to design monolithic distributed amplifiers. Using this computer-aided design (CAD) program, the value of each element of the MESFET small-signal equivalent circuit model, the gate and drain lines The eigenvalues and amplifier stages match the given frequency response. The success of this program is self-healing, requiring only the flatband gain and 3dB power point required for the amplifier. This method is very versatile and can be used to solve a variety of design problems. In addition, it is in good agreement with Touchstone, the most popular microwave simulation program designed for distribution amplifiers.