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纯净的HF腐蚀硅和二氧化硅的速率大体上分别是900埃/分和120埃/分。纯净的CF_4腐蚀硅和二氧化硅的速率大体上分别是320埃/分和90埃/分,而C_2F_6的腐蚀速率大体上分别是390埃和385埃/分。辉光放电使HF分解量达5％、CF_4分解量达13％、而C_2F_6分解量可达51％。将CF_4跟HF混合后看不出它们之间有协合作用。CF_4跟HF的比为1:1的混合气体发生辉光放电时其分解量分别为17％和4％。CF_4和HF间的相互作用看来很微弱,其证据是反应生成物CHF_3的量很少。将HF加进C_2F_6中之后,C_2F_6等离子体对硅和二氧化硅的腐蚀速率都有所下降。将C_2F_6跟HF的比为1:4的混合气体进行辉光放电,C_2F_6和HF的分解百分比分别为54％和30％,并且生成CHF_3和CF_4。
Pure HF etches silicon and silicon dioxide at rates generally of 900 Angstroms / minute and 120 Angstroms / minute, respectively. Pure CF 4 etches silicon and silicon dioxide at rates of substantially 320 and 90 Å / min, respectively, whereas C 2 F 6 corrosion rates are generally 390 and 385 Å / min, respectively. The glow discharge led to 5% decomposition of HF, 13% decomposition of CF_4 and 51% decomposition of C_2F_6. CF_4 mixed with HF can not see synergies between them. The mixed gases with a ratio of CF_4 to HF of 1: 1 emitted 17% and 4% decomposition respectively. The interaction between CF_4 and HF appears to be weak, as evidenced by the small amount of reaction product CHF_3. After HF was added into C_2F_6, the corrosion rate of C_2F_6 plasma to silicon and silicon dioxide decreased. Glow discharge was performed on the mixed gas of C_2F_6 and HF with a ratio of 1: 4. The decomposition percentages of C_2F_6 and HF were 54% and 30% respectively, and CHF_3 and CF_4 were generated.