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采用溶胶 -凝胶 (Sol -Gel)工艺在普通Na -Ca -Si玻璃基体上成功地制备出高c轴择优取向性、高可见光透光率以及高电导率的Al3 + 离子掺杂型ZnO薄膜。利用SEM、XRD以及UVS光谱仪等分析方法对不同工艺下制备的薄膜进行了研究 ,结果显示 ,所制备的薄膜为纤锌矿型结构 ,表面均匀、致密 ,薄膜材料晶粒尺寸大约为 5 0～ 2 0 0nm左右 ,薄膜可见光透光率最大可达 99% ;对薄膜的厚度以及电学性能进行了测定后发现 :单次镀膜厚度约为 3 0～ 5 0nm ,Al3 + 离子掺杂型氧化锌薄膜的电阻率在 2 .5 2× 10 -3 ～ 2 .94× 10 -3 Ω·cm范围内 ,其霍尔系数在 6.2 5× 10 -7～ 2 .3 6× 10 -7cm3 /C范围内 ,载流子浓度在 1×10 2 5～ 2 .64× 10 2 5cm-3 范围内 ,霍尔迁移率在 2 .48× 10 -4 ～ 8.0 3× 10 -5cm2 /V·s范围内 ,在太阳能电池透明光电极领域中极具潜在的应用价值。
Al3 + ion-doped ZnO thin films with high c-axis preferred orientation, high visible light transmittance and high conductivity were successfully prepared on a common Na-Ca-Si glass substrate by the sol-gel process . The films prepared under different processes were studied by SEM, XRD and UVS spectroscopy. The results show that the prepared films are of wurtzite structure, the surface is uniform and dense, the grain size of the films is about 50 ~ About 200 nm, the visible light transmittance of the film is up to 99%. After the thickness and the electrical property of the film are measured, it is found that the single coating thickness is about 30 to 50 nm, and the Al3 + ion-doped zinc oxide film Has a resistivity in the range of 2.52 × 10 -3 ~2.94 × 10 -3 Ω · cm and a Hall coefficient of 6.2 × 10 -7 -2.36 × 10 -7 cm 3 / C , The carrier concentration is in the range of 1 × 10 2 5 ~ 2 .64 × 10 2 5 cm -3, the Hall mobility is in the range of 2.448 × 10 -4 ~ 8.0 3 × 10 -5 cm 2 / V · s, In the field of solar cells transparent photoelectrode potential applications.