一、引言在半导体工业特别在集成电路制造工艺的照象制版技术中,需要用很多手工操作,同时还要甩很多化学药品。这些化学药品的操作有危险性同时其废液的处理也很困难,因此应避免使用。最近为了改善这些危害和化学处理技术特有的缺点,已经考虑采用气体等离子体技术来处理片子的方法。用氧等离子体去除感光性树脂就是其中之一例,它已成为集成电路制造技术的固定工序之一。本文介绍了运用等离子体腐蚀硅化合物的试验结果。这种气体等离子体腐蚀技术与从前的氢氟酸或磷酸系混合液之腐蚀技术不同,它具有无需进行废液处理、操作安全、 I. INTRODUCTION In the semiconductor industry, especially in the integrated circuit manufacturing process of image-plate technology, the need for a lot of manual operation, but also rejection of many chemicals. These chemicals are dangerous to operate and their disposal is difficult and should be avoided. Recently, in order to ameliorate these hazards and the disadvantages of chemical processing techniques, gas plasma techniques have been considered for the treatment of films. One example of this is the removal of photosensitive resins with oxygen plasma, which has become one of the fixed processes for integrated circuit fabrication technology. This article describes the results of plasma etching of silicon compounds. This gas plasma etching technology and the previous hydrofluoric acid or phosphoric acid mixture of different corrosion technology, it has no need for waste disposal, safe operation,