本书为《半导体与半金属卷五红外探测器》的续集,介绍第一集未包括的内容和某些新进展。全书分七章: (1)“红外光导探测器的工作待性”。 (2)“锗和硅掺杂探测器”。介绍制造工艺与特点,指出重点已由锗掺杂转到硅掺杂。 (3)“InSb亚毫米波光导探测器”。介绍热电子光导机理、探测器的特性与磁场对其影响、最佳前放的特性及器件在射电天文和火箭上的应用。 This book is the sequel to “Semiconductors and Semiconductors Volume Five Infrared Detector”, introducing what was not included in the first episode and some new developments. The book is divided into seven chapters: (1) “infrared photoconductivity detector to be inactive.” (2) “Germanium and silicon doping detector.” Introduced manufacturing process and characteristics, pointed out that the focus has been transferred from germanium to silicon doping. (3) “InSb Submillimeter Waveguide Detector”. The introduction of thermal electron photoconductive mechanism, the characteristics of the detector and the impact of the magnetic field on it, the best pre-release characteristics and the application of the device in radio astronomy and rocket.