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本文研究了Si—SnO_2 异质结(Heterojunction)的电学和光学性质。半导体SnO_2薄膜是通过将蒸发在Si单晶(111)面上的Si进行连续氧化的方法得到的。SnO_2 薄膜具有带隙为3.5ev的退化了的n型半导体的性质。n-n型Si-SnO_2 异质结的伏——安特性显示出很好的整流性质。光电压的测量表明,在室温下,n-n型Si-SnO_2 异质结的光响应是分布在400-1200mμ的广阔区间之内。n-n型Si-SnO_2 异质结的能带图根据这些电学和光学的测量结果来确定。
In this paper, the electrical and optical properties of Si-SnO 2 Heterojunction have been studied. The semiconductor SnO 2 thin film is obtained by a method of continuous oxidation of Si evaporated on the (111) plane of a Si single crystal. The SnO 2 thin film has the property of a degenerated n-type semiconductor with a bandgap of 3.5 eV. The volt-ampere characteristics of n-n type Si-SnO 2 heterojunction show good rectifying properties. Photovoltage measurements showed that the photoresponse of n-n-type Si-SnO 2 heterojunction was distributed over a broad range of 400-1200 mμ at room temperature. The band diagram of the n-n type Si-SnO 2 heterojunction is based on these electrical and optical measurements.