集成电路正向高速、高集成度、高可靠性、低成本和低功耗方向发展,正在按比例缩小单元尺寸,因此迫切需要微细加工、薄层外延、低温浅结掺杂。微波二极管、晶体管和太阳电池也需要突变结掺杂,浅结扩散。离子注入虽然已成为低温掺杂的重要方法,但必须解决它所引起的晶格损伤并使注入杂质电激活。我们试图用激光掺杂来制造浅结器件,并做了两个实验。 第一个实验是涂层掺杂。用这种方法可以制造零点几微米的浅结二极管,这一结果对研制微波二极管和浅结集成电路具有重要意义。第二个实验是用激光去退火涂层热扩散片。结果表明,激光退火后,高表面浓度扩散片进一步电激活,使表面掺杂浓度更高;而低表面浓度扩散片由于激光退火时进行再分布,使表面浓度降低,方块电阻上升。 Integrated circuits are moving toward high speed, high integration, high reliability, low cost and low power consumption, and are scaling down the cell size. Therefore, micro-fabrication, thin-layer epitaxy and low-temperature shallow junction doping are urgently needed. Microwave diodes, transistors, and solar cells also require sudden junction doping and shallow junction diffusion. Although ion implantation has become an important method of low temperature doping, it must solve the lattice damage caused by it and make the implanted impurities electrically activated. We tried to make a shallow junction device by laser doping, and we did two experiments. The first experiment is coating doping. In this way, shallow junction diodes of a few tenths of a millimeter can be fabricated. This result is of great importance to the development of microwave diodes and shallow junction integrated circuits. The second experiment used a laser to anneal the coated thermal diffuser. The results show that after laser annealing, the high surface concentration diffusion sheet is further electrically activated to make the surface doping concentration higher. However, the low surface concentration diffusion sheet reduces the surface concentration and the sheet resistance increases due to redistribution during laser annealing.