论文部分内容阅读
本文在国际上首次报道,在用常规光刻技术和化学腐蚀技术制备的非平面GaAs衬底上,利用一次分子束外延技术研制成功掩埋脊形GaAs/Al_(0.3)Ga_(0.7)As多量子线列阵结构。电镜及常规光致发光和微区光致发光测量给出了二维量子限制的证据,理论分析和数值计算也表明了横向载流子限制的有效尺寸是在量子尺寸范围之内。
This paper reports for the first time in the world that on the non-planar GaAs substrate prepared by the conventional photolithography and chemical etching techniques, the success of buried multi-quantum-dotted GaAs / Al 0.3 Ga 0.7 As As Line array structure. Electron microscopy and conventional photoluminescence and micro-region photoluminescence measurements give evidence of two-dimensional quantum confinement. Theoretical analysis and numerical calculations also show that the effective size of lateral carrier confinement is within the quantum size range.