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对应用于高频微波功率放大器的SiGe异质结双极晶体管(HBT)的基区进行了优化。研究发现,器件对基区Ge组分以及掺杂浓度十分敏感。采用重掺杂基区,适当提高Ge组分并形成合适的浓度分布,可以有效地改进SiGe HBT的直流特性,同时能够提高器件的特征频率。晶体管主要性能的提高使SiGe HBT技术在微波射频等高频电子领域得到更加广泛的应用。
The base of the SiGe Heterojunction Bipolar Transistor (HBT) for high frequency microwave power amplifiers is optimized. The study found that the device is very sensitive to the Ge base composition and doping concentration. The heavily doped base region, appropriate increase of Ge composition and formation of proper concentration distribution can effectively improve the DC characteristics of SiGe HBT and improve the characteristic frequency of the device. The improvement of main performance of transistor makes SiGe HBT technology get more extensive application in microwave radio frequency and other high frequency electronic fields.