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A novel 4μm thickness drift region lateral insulated gate bipolar transistor with a floating n-region(NRLIGBT) in p-substrate is proposed.Due to the field modulation from the n-region,the vertical blocking capability is enhanced and the breakdown voltage is improved significantly.Low area cost,high current capability and short turn-off time are achieved because of the high average electric field per micron.Simulation results show that the blocking capability of the new LIGBT increases by about 58%when compared with the conventional LIGBT (C-LIGBT) for the same 100μm drift region length.Furthermore,the turn-off time is shorter than that of the conventional LIGBT for nearly same blocking capability.
A novel 4 μm thickness drift region lateral insulated gate bipolar transistor with a floating n-region (NRLIGBT) in p-substrate is proposed. Due to the field modulation from the n-region, the vertical blocking capability is enhanced and the breakdown voltage is improved significantly.Low area cost, high current capability and short turn-off time are achieved because of the high average electric field per micron. Simulation results show that the blocking capability of the new LIGBT increases by about 58% when compared with the conventional LIGBT ( C-LIGBT) for the same 100 μm drift region length. Durthermore, the turn-off time is shorter than that of conventional LIGBT for nearly same blocking capability.