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Undoped and 1 at.%Co-doped ZnO nanostructure based UV photodetectors were successfully fabricated by RFmagnetron sputtering technique with comb like Pt electrodes.Cobalt ions were successfully incorporated into the lattice of the ZnO nanostructure without changing its wurtzite structure.It was indicated that Co-doping can effectively adjust the luminescence properties of the ZnO nanostructure.The undoped and Co-doped ZnO photodetectors were observed to have photosensitivities of 1.44 104%and 8.57 102%and low dark currents of 9.74 108A and 1.18 107A,respectively.
Undoped and 1 at.% Co-doped ZnO nanostructure based UV photodetectors were successfully fabricated by RFmagnetron sputtering technique with comb like Pt electrodes. Cobalt ions were successfully incorporated into the lattice of the ZnO nanostructure without changing its wurtzite structure. It was indicated that Co -doping can effectively adjust the luminescence properties of the ZnO nanostructure. undoped and Co-doped ZnO photodetectors were observed to have photosensitivities of 1.44 104% and 8.57 102% and low dark currents of 9.74 108A and 1.18 107A, respectively.