采用（Ｓｉ＋Ｍｏ）合金浸渗反应烧结ＳｉＣ，以难熔ＭｏＳｉ_２作为第二相取代ＲＢ－ＳｉＣ中的游离Ｓｉ，从而获得ＲＢ－ＳｉＣ／ＭｏＳｉ_２复合材料．实验结果表明，ＭｏＳｉ_２均匀、连续地分布于ＳｉＣ颗粒界面处，形成连续网络．界面是由ｔ－ＭｏＳｉ_２和β－ＳｉＣ两相交错重叠所构成．界面层处未观察到反应层和非晶态物质，过渡层厚约５ｎｍ． The SiC was infiltrated by (Si + Mo) infiltration reaction and the free Si was substituted by refractory MoSi 2 as the second phase to obtain RB-SiC / MoSi 2 composites. The experimental results show that MoSi_2 is uniformly and continuously distributed at the SiC particle interface and forms a continuous network. The interface is composed of t-MoSi_2 and β-SiC two-phase staggered overlap. The reaction layer and the amorphous material were not observed at the interface layer, and the transition layer was about 5 nm thick.