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采用恒电流电化学技术直接在金属钨片上制备了具有白钨矿结构的钨酸锶(SrWO4)晶态薄膜,通过SEM和EDX测试分析方法,研究了薄膜在不同的生长阶段(包括薄膜从最初成核并开始生长,到薄膜布满整个基片,即薄膜生长结束)的生长特性。研究结果表明,SrWO4晶核和晶粒优先选择在基片的缺陷处堆砌生长,在薄膜生长的初期,一定数量的WO4负离子配位多面体沉积在基片上并形成具有白钨矿结构的骨架,继而Sr2 +对该骨架进行填充,由此形成晶核和晶粒;随着沉积时间的延长,晶粒密度不断增大,晶核和晶粒也不断长大,并沿着c轴生长的方向开始分叉,晶粒越大分叉越多;最终,当SrWO4薄膜生长过程结束时,团簇生长的花菜状晶粒布满整个基片,形成致密的薄膜。该研究结果对晶态薄膜电化学制备生长机制的认识、以及采用电化学方法制备晶态薄膜的工艺调控都具有重要意义。
The strontium tungstate (SrWO4) thin films with scheelite structure were directly prepared on tungsten metal by galvanostatic galvanostatic technique. The effects of different growth stages (including the growth of thin films from the beginning Nucleated and started to grow until the film covered the entire substrate, ie, the growth of the film was completed). The results show that the SrWO4 nucleus and the crystal grains preferentially pile up at the defects of the substrate. At the initial stage of the film growth, a certain amount of WO4 anion coordination polyhedrons are deposited on the substrate and form a framework with a scheelite structure, and then Sr2 + filled the framework to form nuclei and grains; with the deposition time, the grain density increases, the nuclei and grains are also growing, and along the c-axis growth direction Bifurcation, the larger the larger the bifurcation; finally, when the growth process of SrWO4 film at the end of the cluster of cauliflower-like grains covered the entire substrate to form a dense film. The results of this study are of great significance for the understanding of the growth mechanism of the crystalline thin film electrochemical preparation and for the preparation of the crystalline thin film by the electrochemical method.