1问:IGBT的基本概念是什么?答:IGBT(Insulated Gate Bipolar Transistor)也称为绝缘栅双极型晶体管,它本质上是一个场效应晶体管MOSFET驱动的厚基区双极型大功率晶体管。由于IGBT为电压驱动,具有驱动功率小,开关速度高,饱和压降低,可耐高电压和大电流等一系列优点,表现出很好的综合性能,已成为当前变频器的主流开关器件以及工业领域应用最广泛的 1 Q: What is the basic concept of IGBT? A: IGBT (Insulated Gate Bipolar Transistor), also known as insulated gate bipolar transistor, is essentially a field-effect transistor MOSFET-driven thick base bipolar power transistor. As the IGBT is driven by voltage, it has a series of advantages such as low driving power, high switching speed, low saturation voltage, high voltage and high current, showing good overall performance. It has become the mainstream of the current inverter switching devices as well as industrial The most widely used field