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通过求解光生载流子连续性方程,得出GaN基p-i-n型紫外探测器耗尽层中的光生载流子密度分布.根据泊松方程计算了光生载流子屏蔽电场,并通过数值计算方法将光生载流子屏蔽电场引入器件模型,建立了光生载流子屏蔽效应模型.在此基础上,讨论了光生载流子屏蔽效应对p-i-n型探测器耗尽区光生载流子密度分布的影响,并分析了外加偏压、入射光功率以及载流子寿命对光生载流子屏蔽效应模型的影响.结果表明光生载流子屏蔽效应对器件性能的影响是非单调的,且通过调节外置偏压可以得到最大载流子漂移速度和最小器件响应时间.
The photogenerated carrier density distribution in the depletion layer of GaN-based pin-type UV detectors was obtained by solving the equation of continuity of photo-carriers, and the photo-induced carrier electric field was calculated according to the Poisson's equation. The model of photo-generated carrier shielding effect was established based on the model of photo-generated carrier shielding electric field. On this basis, the effect of photocarrier shielding effect on photo-generated carrier density distribution in depletion region of pin-type detector was discussed. The effects of external bias voltage, incident light power and carrier lifetime on photo-induced carrier shielding effect are analyzed.The results show that the effect of photo-induced carrier shielding effect on the device performance is non-monotonic, and by adjusting external bias Maximum carrier drift speed and minimum device response time are available.