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极紫外光刻技术 (EUVL ,λ =1 3.4nm)是为小于 70nm特征尺寸图形制作而开发的下一代光刻技术 (NGL)。在麦迪逊威斯康星大学开发的极紫外光刻系统中 ,极紫外光源是由电子存储环中的波动器产生 ,为极紫外干涉光刻 (EUV -IL)提供了瞬间空间相干光源。其成像系统采用了一个洛埃镜干涉仪。用EUV -IL制作的高分辨力图形进行极紫外光刻的抗蚀剂特性研究。验证了用EUV光源的干涉光刻技术制作 1 9nm线 /间 (L/S)条纹图形 ,同时报告了采用EUV -IL技术开发亚 50nm密集线 /间图形的进展 ,并开始向制作 1 2 0nm多晶硅栅图形过渡
EUV lithography (EUVL, λ = 1 3.4 nm) is the next generation lithography (NGL) technology developed for pattern features smaller than 70 nm. In the EUV lithography system developed at the University of Wisconsin at Madison, EUV light sources are created by wave pans in electronic storage rings, providing an instantaneous spatial coherent light source for extreme ultraviolet interference lithography (EUV-IL). Its imaging system uses a Loeser mirror interferometer. Research on resist characteristics of EUV lithography using high resolution graphics made with EUV-IL. The interference pattern lithography with EUV light source was used to fabricate a 1 9 nm line / space (L / S) fringe pattern and the progress of developing sub-50 nm dense line / space pattern using EUV-IL technology was reported. Polycrystalline silicon gate pattern transition