论文部分内容阅读
以高纯石墨做靶,CHF3和Ar气为源气体,采用射频反应磁控溅射法在不同流量比条件下制备了氟化类金刚石(F-DLC)薄膜.利用原子力显微镜、纳米压痕仪、拉曼光谱和红外光谱、摩擦磨损测试仪对薄膜的表面形貌、硬度、键结构以及摩擦性能做了具体分析.表面形貌测试结果表明,制备的薄膜整体均匀致密,表现出了良好的减摩性能.当CHF3与Ar气流量比r为1:6时,所得薄膜的摩擦系数减小至0.42,而纳米压痕结果显示,此时薄膜的硬度也最高.拉曼和红外光谱显示,随着r的增加,薄膜中的F浓度呈上升趋势,薄膜中的芳香环比例减小.研究表明,F原子的键入方式是影响F-DLC薄膜摩擦系数的一个重要因素,CF2反对称伸缩振动强度的减弱和CC中适量碳氢氟键的形成都能导致薄膜具有相对较低的摩擦系数.
The high-purity graphite as the target, CHF3 and Ar gas as the source gas, using RF reactive magnetron sputtering method at different flow rates prepared fluorinated diamond (F-DLC) film using atomic force microscopy, nanoindenter , Raman spectroscopy and infrared spectroscopy, friction and wear tester were used to make a detailed analysis of the surface morphology, hardness, bond structure and friction properties of the film.The surface morphology test results show that the prepared film is uniform and compact overall, showing good The friction coefficient decreased to 0.42 when the flow ratio of CHF3 to Ar gas was 1: 6. The results of nanoindentation showed that the hardness of the film was also the highest at this time.The Raman and infrared spectra showed that the friction coefficient With the increase of r, the concentration of F in the film shows an upward trend, and the proportion of aromatic rings in the film decreases. The results show that the mode of F atoms bonding is an important factor affecting the friction coefficient of F-DLC films. The anti-symmetric stretching vibration The decrease of the strength and the formation of the proper amount of hydrofluorocarbon bonds in CC can lead to the film having a relatively low coefficient of friction.