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通过直接测量激光照射前后电阻随温度的变化关系，研究了Ｇａ δ掺杂ＺｎＳｅ 超晶格的稳恒光电导效应．被研究的两块样品都显示了稳恒光电导效应，其中一块样品稳恒光电导的淬灭温度为１２０Ｋ，另一块样品的淬灭温度接近２９０Ｋ．描述了对这类超晶格稳恒光电导现象的测量结果，讨论了掺杂过程对光电导淬灭温度的影响．
The direct photoconductivity of Ga δ -doped ZnSe superlattices was studied by directly measuring the relationship between the resistance and the temperature before and after laser irradiation. Both samples studied show a steady photoconductive effect, in which one sample has a constant photoconductive quenching temperature of 120K and the other sample has a quenching temperature near 290K. The measurement results of this kind of superlattice stationary photoconductivity are described, and the effect of doping on the photoconductivity quenching temperature is discussed.