近日,应用材料公司宣布推出先进的Applied Centura TetraTMIII掩膜刻蚀设备,它是目前唯一可以提供45纳米光掩膜刻蚀所需要的至关重要的纳米制造技术系统。Tetra III通过控制石英掩膜把刻槽深度控制在10A以内,同时把临界尺寸损失减小到10nm以下,使客户可以在最重要的器件层交替使用相移掩膜和强有力的光学临近修正技术。该系统为基 Recently, Applied Materials announced the availability of its advanced Applied Centura TetraTMIII mask etching equipment, which is currently the only critical nano-fabrication technology system required to provide 45 nm photomask etching. By controlling the depth of the notches to within 10 A with the quartz mask and reducing the critical dimension loss below 10 nm, the Tetra III allows customers to alternately use phase-shift masks and powerful optical proximity correction techniques at the most important device layers . The system is based