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在 Ar和 O2 气体中 ,基片温度在 15 0～ 40 0℃的条件下 ,用直流磁控溅射的方法可以制备纳米晶透明导电薄膜。实验利用 TL M模型测试了纳米晶 Sn O2 透明导电薄膜的方块电阻、单位面积薄膜的接触电阻和电极与薄膜的结合力随热处理温度的变化情况
The nanocrystalline transparent conductive films can be prepared by direct current magnetron sputtering in Ar and O2 gas at a substrate temperature of 15 0 ~ 40 0 ℃. The TLM model was used to test the sheet resistance, the contact resistance per unit area of the thin film and the binding force between the electrode and the thin film with the heat treatment temperature