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用 Ｂ２Ｈ６和 ＳｉＨ４作反应气体，通过射频等离子体增强化学气相淀积（ＲＦ－ＰＥＣＶＤ）方法，在 Ｓｉ（１００）面上沉积生长ＢＮ薄膜，用Ｓ－５２０扫描电子显微镜对所得薄膜进行观测，并用红外透射光谱测试分析了膜的成分。在室温、压力为 ８ × １０－４ Ｐａ条件下，对 ＢＮ薄膜的电流一电压特性进行测量，并得到了 Ｆｏｗｌｅｒ－Ｎｏｒｄｈｅｉｍ特性曲线，ＢＮ膜的场发射开启电场为９ Ｖ／μｍ，在电场３７．５ Ｖ／μｍ时，电流密度达到２４．８ ｍＡ／ｃｍ２。
BN films were deposited on Si (100) surface by RF-PECVD using B2H6 and SiH4 as reaction gases, and the obtained films were observed by S-520 scanning electron microscope and used with Infrared transmission spectroscopy analysis of the composition of the film. The current-voltage characteristics of the BN thin film were measured at room temperature and pressure of 8 × 10-4 Pa, and the Fowler-Nordheim characteristic curve was obtained. The field emission turn-on electric field of the BN film was 9 V / μm. In the electric field 37 At 5 V / μm, the current density reaches 24.8 mA / cm2.