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Physical Properties of Al-doped ZnO and Ga-doped ZnO Thin Films Prepared by Direct Current Sputterin
【机 构】
：
Department of Physics and Mathematics, Hunan Institute of Technology, Hengyang 421002, China;Ningbo
【出 处】
：
武汉理工大学学报（材料科学版）（英文版）
【发表日期】
：
2017年1期
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