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本文介绍一种碲镉汞/硅混合阵列,它是采用金属氧化物半导体(MOS)开关完成多路传输的新型器件,下面将表明这种器件能实现电子扫描阵列所希望得到的许多优点,而避免电荷传输器件存在的主要问题。行寻址N×N阵列结构的示意图见图1。每一红外二极管阳极接于其公共地线,阴极通过开关接到输出线。每一列的开关控制栅互连在一起,用每一列的选择移位寄存器选址。工作时,每一列二极管依次由开关选择,并且连接到积分放大器上,放大器输出经多路传输,
This paper presents a HgCdTe / Si hybrid array that is a new device that uses multiple metal oxide semiconductor (MOS) switches to perform multiple transmission. It will be shown below that the device can achieve many of the desired advantages of an electronic scanning array, Avoid the major problems with charge transfer devices. The schematic of the row addressing N × N array structure is shown in Figure 1. Each infrared diode anode connected to its common ground, the cathode connected to the output line through the switch. The switch control gates for each column are interconnected and sited by the select shift register for each column. Work, each column followed by the diode switch selection, and connected to the integral amplifier, the amplifier output multiplexed,