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研究了3～5μm波段n型(Hg,Cd)Te材料的寿命。(Hg,Cd)Te晶片的寿命用脉冲GaAs激光器的光导衰减法测定,并在各种工艺处理步骤后重复测量。研磨表面的寿命低达0.2μS,用化学腐蚀法除去表面损伤后增加4.5μs。用单晶体X射线摆线法测定损伤深度。用粒度大小为1μm的磨料研磨的表面,造成的损伤深度为 20μm。制备了多元探测器阵列,所测得的制成品寿命为2.5μs。这些测量表明,制备器件时经过的各种工艺程序并未使寿命显著降低。
The lifetime of n-type (Hg, Cd) Te materials in 3 ~ 5μm band was studied. The lifetime of (Hg, Cd) Te wafers was measured by the optical attenuation of a pulsed GaAs laser and repeated after various process steps. The life of the abraded surface is as low as 0.2 μS, with a chemical ablation method to increase the surface damage by 4.5 μs. Determination of lesion depth by single crystal X - ray cycloid method. Surfaces abraded with an abrasive having a particle size of 1 [mu] m resulted in a depth of damage of 20 [mu] m. A multivariate detector array was prepared with a measured finished life of 2.5 μs. These measurements show that the various process sequences that pass through the device are not significantly reduced in lifetime.