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GaInAsP/InP系列激光器由于其T0 小 ,且受环境温度影响大 ,所以用一般结构制作阵列器件是很困难的。而采用大光腔 (LOC)结构的激光器 ,其T0 值可达 10 0～ 140K ,单个 1.3μm激光器 ,脉冲峰值功率超过 3W ,单个 1.55μm激光器 ,脉冲峰值功率超过 2W。用它们的芯片研制了堆积阵列激光器。在研制中发现 ,阵列的输出功率小于各单元器件输出功率之和 ;而减小的比率随着单元数目增加而增加。所制成的 3× 4单元的 1.3μm阵列激光器 ,其脉冲峰值功率大于 2 4W ;4× 4单元的 1.55μm阵列激光器的脉冲峰值功率大于 2 0W。
GaInAsP / InP series lasers are difficult to fabricate array devices using the general structure because of their small T0 and large ambient temperature influence. The use of a large optical cavity (LOC) structure of the laser, the T0 value of up to 10 ~ 140K, a single 1.3μm laser, pulse peak power over 3W, a single 1.55μm laser pulse peak power exceeds 2W. Stacked array lasers were developed using their chips. Found in the development, the output power of the array is less than the sum of the output power of each unit; and the reduced ratio increases as the number of cells increases. The fabricated 3 × 4 cell 1.3 μm array laser has a pulse peak power of more than 24 W and a 4 × 4 cell 1.55 μm array laser has a pulse peak power of more than 20 W.