论文部分内容阅读
采用磁控溅射法在衬底Pt(111)/Ti/SiO_2/Si(100)上制备BiFeO_3(BFO)薄膜,退火温度为500℃、550℃、600℃和630℃.利用X射线衍射仪(XRD)、原子力显微镜(AFM)、紫外-可见(UV-Vis)吸收及光伏性能等测试手段对BFO薄膜进行表征.XRD测试表明,除退火温度为500℃的BFO薄膜出现富铁相(Bi_2Fe_4O_9)外,其余退火温度下的BFO薄膜呈单一的钙钛矿相,空间群为R3c.AFM结果显示,随着退火温度的升高,BFO薄膜表面越平整.同时研究得出,退火温度为550℃下BFO薄膜的光学带隙为2.57eV,不同退火温度下的BFO薄膜器件的光伏性能较差.
The BiFeO_3 (BFO) thin films were prepared on the substrate Pt (111) / Ti / SiO_2 / Si (100) by magnetron sputtering at annealing temperature of 500 ℃, 550 ℃, 600 ℃ and 630 ℃. (XRD), atomic force microscopy (AFM), UV-Vis absorption and photovoltaic properties were used to characterize the BFO films.XRD results showed that the BFO films with ferrite phase (Bi 2 Fe 4 O 9 ), The other BFO films annealed at a single perovskite phase and the space group R3c.AFM results show that the BFO film surface is more flat with the annealing temperature increasing.At the same time, the annealing temperature is 550 The optical band gap of BFO thin film is 2.57eV at different temperature, and the photovoltaic performance of BFO thin film device under different annealing temperature is poor.