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有证据表明,在空穴浓度约10~(16)厘米~(-3)(77°K)的材料薄片上,使用杂质扩散方法制成的Pb_(0.79)Sn_(0.21)Te 平面型光电二极管,其增量电阻和面积的乘积(RA)受体扩散电流的限制。然而,尽管有这种限制,在70-100°K 温度范围里,这种光电二极管的增量电阻和面积的乘积可以与碲化铅-碲锡铅异质结的相比拟。目前,T=100°K 时D_λ~*≥2.5×10~(10)厘米·赫~(1/2)·瓦~(-1)产;T≤80°K 时D_λ~*>10~(11)厘米·赫~(1/2)·瓦~(-1)。
There is evidence that the Pb_ (0.79) Sn_ (0.21) Te planar photodiode fabricated by the impurity diffusion method is deposited on a thin film of about 10 ~ (16) cm -3 (77 ° K) , The product of its incremental resistance and area (RA) is limited by the diffusion current of the receptor. However, despite this limitation, the product of the incremental resistance and area of this photodiode can be compared with the lead telluride-tellurium-tin-lead heterojunction over the 70-100 ° K temperature range. At present, D_λ ~ * ≥2.5 × 10 ~ (10) cm · Hz ~ (1/2) · W ~ (-1) at T = 100 ° K and D_λ ~ *> 10 ~ 11) cm · He ~ (1/2) · W ~ (-1).