一、前言在半导体器件工艺中,随着大规模集成电路的发展和超大规模集成电路的出现,对多晶硅膜的均匀性和质量的要求越来越高。原来的常压冷壁化学气相淀积方法(简称常压CVD技术)已经不能满足这种要求。人们开始研究新的技术来满足电路对工艺的要求。自1976年以来,国外相继报导了低压化学 I. Introduction In the semiconductor device technology, with the development of large-scale integrated circuits and the emergence of very large-scale integrated circuits, the requirements for the uniformity and quality of the polysilicon films are getting higher and higher. The original atmospheric wall cold chemical vapor deposition method (referred to as atmospheric pressure CVD technology) can no longer meet this requirement. People began to study new technologies to meet the circuit requirements of the process. Since 1976, foreign countries have reported low-pressure chemical