【摘 要】
：
Ultra-high-voltage(UHV)junction field-effect transistors(JFETs)embedded separately with the lateral NPN(JFETLNPN),and the lateral and vertical NPN(JFET-LVNPN),are demonstrated experimentally for improving the electrostatic discharge(ESD)robustness.The ESD
【机 构】
：
EngineeringResearchCenterofInternetofThingsTechnologyApplications（MinistryofEducation）
【基金项目】
：
the National Natural Science Foundation of China(Grant No.61504049)。
论文部分内容阅读
Ultra-high-voltage(UHV)junction field-effect transistors(JFETs)embedded separately with the lateral NPN(JFETLNPN),and the lateral and vertical NPN(JFET-LVNPN),are demonstrated experimentally for improving the electrostatic discharge(ESD)robustness.The ESD
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