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第一次报导了HgCdTe双色探测器的性能和它的分子束外延生长材料,这种器件能同时探测4.1μm和4.5μm的辐射。在原位进行掺杂的器件具有n-p-n结构,是由分子束外延技术在(211)BCdZnTe衬底上生长出来的。在X射线摆动曲线极大值的半高处、具有全宽度所显示出来的代表性结构是40-60arc-s。在这些结构中,典型的近表面腐蚀坑密度是(4-7)×10~6cm~(-2)。器件是以台面二极管的形式制作的,电极做到两个n型外延层和一个p型外延层上,以便使两个p-n结能同时工作。这种器件的光谱响应特性在两个波段能突然开启和关闭,77K的R_oA>5×~5Ωcm~2。探测器在两个波段的量子效率均>70%。
For the first time, the performance of the HgCdTe two-color detector and its molecular beam epitaxy growth material are reported, which are capable of detecting both 4.1 μm and 4.5 μm radiation simultaneously. The in-situ doped devices have n-p-n structures grown on (211) BCdZnTe substrates by molecular beam epitaxy. At half-height of the X-ray swing curve maximum, the full width shows the typical structure 40-60 arc-s. In these structures, the typical near-surface etch pit density is (4-7) × 10 ~ 6cm -2. The device is fabricated in the form of a mesa diode that has two n-type epitaxial layers and a p-type epitaxial layer so that the two p-n junctions can work simultaneously. The spectral response characteristics of this device can be suddenly turned on and off in two bands, 77K R_oA> 5 × ~ 5Ωcm ~ 2. The quantum efficiency of the detector in both bands is> 70%.