论文部分内容阅读
A new alloy system,In/AuGeNi/Ag/Au,for GaAs ohmic contact has been proposed and studied in this paper.Our experimental results have shown that this alloy system can not only reduce the ohmic contact resistivity,but also improve the surface morphology of the contact.The typical contact resistivity of In/AuGeNi/Ag/Au metallization to n|type GaAs is 5×10 -7 Ω·cm+2.Comparing with AuGeNi/Ag/Au metallization,the new system has a thin In layer inserted between AuGeNi and GaAs.It can overcome so called “balling|up” effect,which offen appears in AuGeNi metallization after annealing.In additioin,it was found in our Auger electron spectroscopy profile that Ag can alloy with Au throughout and go into GaAs as well during the annealing at 400℃.It may be helpful to study of the alloy mechanism.
A new alloy system, In / AuGeNi / Ag / Au, for GaAs ohmic contact has been proposed and studied in this paper. Our experimental results have shown that this alloy system can not only reduce the ohmic contact resistivity, but also improve the surface morphology of the contact. The typical contact resistivity of In / AuGeNi / Ag / Au metallization to n type GaAs is 5 × 10 -7 Ω · cm + 2.Comparing with AuGeNi / Ag / Au metallization, the new system has a thin In layer inserted between AuGeNi and GaAs. It can overcome so called “balling | up” effect, which offen appears in AuGeNi metallization after annealing. Additioin, it was found in our Auger electron spectroscopy profile that Ag can alloy with Au throughout and go into GaAs as well during the annealing at 400 ° C.It may be helpful to study of the alloy mechanism.