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研究了电子-体纵光学声子弱耦合情况下,抛物量子点中激子的性质。在有效质量近似下,采用线性组合算符和幺正变换方法研究了抛物量子点中弱耦合激子的基态能量和光学声子平均数。以GaAs半导体为例进行了数值计算,结果表明:弱耦合情况下,激子的光学声子平均数基态的能量和量子点受限强度的增大而减小,随量子点半径的增大而增大。
The properties of excitons in a parabolic quantum dot are studied under weakly coupled electron-body longitudinal optical phonons. Under the effective mass approximation, the ground-state energy and the average number of optical phonons of the weakly coupled excitons in a parabolic quantum dot are studied by using the linear combination operator and the unitary transformation method. Taking GaAs semiconductor as an example, the numerical results show that the energy of the ground state of the exciton decreases with the increase of the quantum confinement strength under the weak coupling condition. With the increase of the quantum dot radius Increase.