论文部分内容阅读
,UV Light-Emitting Diodes at 340 nm Fabricated on a Bulk GaN Substrate
【机 构】
：
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electroni
【出 处】
：
中国物理快报（英文版）
【发表日期】
：
2010年8期
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