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利用真空离子沉积技术在钼栅极的表面分别镀上一层Ｃ膜、Ａｌ膜和ＡｌＴｉＺｒ合金膜，对镀膜后的样品进行寿命试验。用ＳＥＭ和ＸＲＤ分析技术对镀膜样品受阴极活性蒸发物Ｂａ污染前、污染后进行了对比研究。实验结果表明：逸出功较低的Ａｌ在受到Ｂａ污染后，能够生成金属间化合物，从而能够有效地抑制栅极发射；而沉积的Ｃ膜在受到污染后，逐渐被消耗而失去作用；在Ａｌ中加入逸出功较高的ＴｉＺｒ合金后，破坏了金属间化合物的生成，并不能抑制栅极发射。实验说明逸出功低的Ａｌ也可涂覆到栅极上，在栅极工作过程中，当Ａｌ与阴极的蒸发物生成金属间化合物时，可以降低栅极发射。这为开发新的栅极涂覆材料提供了思路。
The surface of the molybdenum grid was coated with a layer of C film, Al film and AlTiZr alloy film respectively by vacuum ion deposition technique to test the life of the coated sample. The SEM and XRD analysis of the coated samples before the cathode active evaporation of Ba pollution, a comparative study after pollution. The experimental results show that Al, which has a low work function, can generate intermetallic compounds after being contaminated by Ba, which can effectively suppress the gate emission. The deposited C film is gradually consumed and has no effect after it is contaminated. At The addition of high work-function TiZr alloy to Al destroys the formation of intermetallic compounds and does not inhibit the gate emission. Experiments show that low work function Al can also be applied to the gate electrode. During the gate work, gate emission can be reduced when Al and the cathode evaporation produce intermetallic compounds. This provides ideas for developing new gate coating materials.