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采用PECVD法制备的纳米硅薄膜是一种具有特殊性能的人工材料。它是由大量具有纳米量级的硅微晶粒构成,纳米硅晶粒镶嵌在由非晶硅构成网络中,其晶粒所占的体积百分比为XC≈50%,从而决定了其特有的性质。本文通过严格控制薄膜生长的工艺参数,得到了掺磷纳米硅薄膜,并通过原位纳米力学电学测试系统对其力学和电学性质进行测试,发现掺磷纳米硅薄膜的纳米硬度为5GPa,而其杨氏模量随着压入深度的增加而增大,其接触电阻与薄膜的结构密切相关。这些属性对于纳米硅薄膜微器件的制备具有重要的参考意义。
The nano-silicon film prepared by PECVD is a kind of artificial material with special properties. It is composed of a large number of nanocrystalline silicon micro-grains with a size of XC≈50%, which is determined by the unique properties of nanocrystalline silicon embedded in a network of amorphous silicon . In this paper, by strictly controlling the process parameters of the film growth, a phosphorus-doped nano-silicon film was obtained and its mechanical and electrical properties were tested by the in-situ nano mechanical electrical test system. The nano-hardness of the phosphorus doped nano-silicon film was found to be 5 GPa, The Young's modulus increases with the depth of press-in. The contact resistance is closely related to the structure of the film. These properties for the preparation of nano-silicon thin film devices have important reference value.