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为制备Ａ１／ＰＺＴ／Ｐｔ／Ｔｉ电容，研究了采用ＳＦ６／Ａｒ等离子体对Ｐｂ（Ｚｒ，Ｔｉ）Ｏ３及Ｐｔ／Ｔｉ底电极进行反应离子刻蚀（ＲＩＥ）的技术．较系统地研究了ＲＦ功率，ＳＦ６／Ａｒ流量比及气压对刻蚀速率的影响，找到了对ＰＺＴ及Ｔｉ进行ＲＩＥ的优化工艺条件．在不同的条件下得到对ＰＺＴ的刻蚀速率为２～７ｎｍ／ｍｉｎ；采用纯Ａｒ气体时Ｐｔ的刻蚀速率为２～６ｎｍ／ｍｉｎ；对于Ｔｉ可用ＨＣｌ及Ｈ２Ｏ２溶液进行腐蚀
In order to prepare Al / PZT / Pt / Ti capacitors, the reactive ion etching (RIE) of Pb (Zr, Ti) O3 and Pt / Ti bottom electrodes with SF6 / Ar plasma was studied. The influences of RF power, SF6 / Ar flow rate and pressure on the etching rate were systematically studied. The optimum technological conditions for RIE of PZT and Ti were found out. The etching rate of PZT is 2 ~ 7nm / min under different conditions; the etching rate of Pt is 2 ~ 6nm / min when pure Ar gas is used; and the etching of Ti with HCl and H2O2 solution