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本文报道了用Pd栅MOS器件检测低浓度H_2S气体的实验结果。指出Pd栅MOS器件对浓度<10ppm的H_2S气体是灵敏的。其灵敏度随Pd栅MOS器件的工作温度升高而升高。在150℃时,器件对空气中含3ppm H_2S有较大的响应值,其MOS电容平带电压V_(FB)变化量达几百毫伏。对氮气中的H_2S气体也有响应,但灵敏度较低。器件对H_2S气响应时间较快,但恢复很慢,影响器件重复使用。然而,将器件放在流动空气中,短时间后即可恢复。指出Pd—MOS器件接触H_2S气体有中毒现象,但空气中的O_2对解毒过程起了重要作用。
This paper reports the experimental results of Pd gate MOS device for detecting low concentration H 2 S gas. It is pointed out that Pd gate MOS devices are sensitive to H 2 S gas at concentrations <10 ppm. Its sensitivity increases as the operating temperature of the Pd gate MOS device increases. At 150 ℃, the device has a large response to 3ppm H_2S in the air, and the V_ (FB) of the MOS capacitor changes by a few hundred millivolts. It also responds to H 2 S in nitrogen but has lower sensitivity. Device response to H_2S gas faster, but the recovery is very slow, affecting the device re-use. However, placing the device in flowing air will recover after a short period of time. It is pointed out that the Pd-MOS device is poisoned by H 2 S gas contact, but O 2 in the air plays an important role in the detoxification process.