用X射线双晶衍射法测定了在GaAs衬底的(001),(110),(111)和(113)方向上生长的Ga_(1-x)Al_xAs外延层的应力状态。算进了立方晶胞化合物的各向异性的弹力以后,测定了松弛晶格常数以及外延层的组分。本文提出了Ga_(1-x)Al_xAs/GaAs双异质结构的双晶旋转曲线。它们允许非破坏性地、独立地确定激光结构的两个Ga_(1-x)Al_xAs外延层的铝含量,并且 The stress states of Ga 1-x Al x GaAs epitaxial layers grown in the (001), (110), (111) and (113) directions of GaAs substrates were measured by X-ray double crystal diffraction. After calculating the anisotropic elastic force of the cubic cell compound, the relaxed lattice constant and the composition of the epitaxial layer were measured. In this paper, we propose a twin crystal rotation curve of Ga_ (1-x) Al_xAs / GaAs double heterostructure. They allow to determine the aluminum content of two Ga 1-x Al x As epitaxial layers of a laser structure non-destructively and independently and