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A Pb_(1-x)Eu_xSe_yTe_(1-y) double heterostructure was grown successfully on a p-type (100)_oriented PbTesubstrate by molecular beam epitaxy.In order to obtain semiconductor laser emitting at 2～4 μm,the band gapof the active region can be adjusted by controlling Eu composition (x value) in the active region.It was obtainedthat x=0.012,y=0.016 for the active region and x=0.030,y=0.016 for the confinement layers.The resultsmeasured from SEM and electrical properties show that the Pb_(1-x)Eu_xSe_yTe_(1-y) double heterostructure has ahomogeneous morphology and an obvious junction character.
A Pb_ (1-x) Eu_xSe_yTe_ (1 -y) double heterostructure was grown successfully on a p-type (100) _oriented PbTesubstrate by molecular beam epitaxy. In order to obtain semiconductor laser emission at 2 to 4 μm, the band gap of the Active region can be adjusted by controlling Eu composition (x value) in the active region. It was obtained that x = 0.012, y = 0.016 for the active region and x = 0.030, y = 0.016 for the confinement layers. electrical properties show that the Pb_ (1-x) Eu_xSe_yTe_ (1-y) double heterostructure has a ahomogeneous morphology and an obvious junction character.