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研究了ＧａＡｓＳｂ/ＧａＡｓ应变量子阱及应变补偿量子阶激光器结构的光致发光和电注入发光．结果表明,分子束外延生长温度的改变使量子附发光性能发生系统性变化,证明生长温度对量子阱中锑的组分和界面质量具有重要影响．同时,低温光致发光峰的波长随激发功率密度增大发生明显蓝移,具有Ⅱ类量子阱的特点．应变补偿量子阱激光器在波长为１．３μｍ附近激射,阈值电流密度约为１．８ｋＡ/ｃｍ２．
The photoluminescence and electric injection luminescence of GaAsSb / GaAs strained quantum wells and strain compensated quantum order lasers are studied. The results show that the change of molecular beam epitaxy makes the quantum performance of the system change systematically, and the growth temperature has an important influence on the composition and interface quality of antimony in the quantum well. At the same time, the wavelength of low temperature photoluminescence peak is obviously blue-shifted with the increase of excitation power density, which has the characteristics of quantum well of type II. Strain compensated quantum well lasers emit at a wavelength of about 1.3 μm with a threshold current density of about 1.8 kA / cm 2.